SGOI thinning and uniformity improvement using a fluoride GCIB process

Author

Chu, J.O. ; Allen, L.P. ; Skinner, W. ; Hautala, J. ; Tetreault, T.G. ; MacCrimmon, R. ; Santeufemio, C. ; Degenkolb, E. ; Fenner, D.B.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2003

fDate

29 Sept.-2 Oct. 2003

Firstpage

46

Lastpage

47

Abstract

In this paper, we investigates the first time use of a non-agglomerate forming, fluoride gas cluster ion beam rapid etch and smooth process on SiGe transfer layers for SGOI substrate fabrication. Atomic force microscopy and spectroscopic ellipsometry were employed to determine surface morphology and thickness changes.

Keywords

Ge-Si alloys; atomic force microscopy; ellipsometry; ion beam applications; semiconductor materials; semiconductor technology; semiconductor-insulator boundaries; sputter etching; surface morphology; AFM; SiGe; SiGe transfer layers; SiGe-on-insulator; atomic force microscopy; fluoride gas cluster ion beam rapid etching; nonagglomerate forming; spectroscopic ellipsometry; surface morphology; Atomic force microscopy; Ellipsometry; Germanium alloys; Ion beam applications; Semiconductor device fabrication; Semiconductor materials; Semiconductor-insulator interfaces; Silicon alloys; Sputter etching;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2003. IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-7815-6

Type

conf

DOI

10.1109/SOI.2003.1242891

Filename

1242891