Photon back-scatter analysis of SOI wafers

Author

Zingg, Rene P. ; Orazio, Fred D.

Author_Institution

Philips Semicond., Nijmegen, Netherlands

fYear

2003

fDate

29 Sept.-2 Oct. 2003

Firstpage

Lastpage

Abstract

Silicon-on-insulator (SOI) provides novel challenges in metrology and prevention of subsurface micro-defects. This article shows the potential of a unique analysis tool to pinpoint and eliminate sources of such damage, which can severely degrade minority carrier lifetimes and therefore bipolar device gain. Cross-sectional analysis of an IC manufacturing process has been done for the first time, indicating curing by annealing and generation of new defects by different process steps.

Keywords

annealing; backscatter; carrier lifetime; integrated circuit manufacture; laser beam effects; light scattering; silicon-on-insulator; IC manufacturing process; SOI wafers; Si-SiO₂; annealing; bipolar device gain; carrier lifetimes; laser beam effects; metrology; photon back-scattering; silicon-on-insulator; subsurface micro-defects; Annealing; Charge carrier lifetime; Integrated circuit manufacture; Laser radiation effects; Optical scattering; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2003. IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-7815-6

Type

conf

DOI

10.1109/SOI.2003.1242894

Filename

1242894

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258486