Title :
Photon back-scatter analysis of SOI wafers
Author :
Zingg, Rene P. ; Orazio, Fred D.
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
fDate :
29 Sept.-2 Oct. 2003
Abstract :
Silicon-on-insulator (SOI) provides novel challenges in metrology and prevention of subsurface micro-defects. This article shows the potential of a unique analysis tool to pinpoint and eliminate sources of such damage, which can severely degrade minority carrier lifetimes and therefore bipolar device gain. Cross-sectional analysis of an IC manufacturing process has been done for the first time, indicating curing by annealing and generation of new defects by different process steps.
Keywords :
annealing; backscatter; carrier lifetime; integrated circuit manufacture; laser beam effects; light scattering; silicon-on-insulator; IC manufacturing process; SOI wafers; Si-SiO2; annealing; bipolar device gain; carrier lifetimes; laser beam effects; metrology; photon back-scattering; silicon-on-insulator; subsurface micro-defects; Annealing; Charge carrier lifetime; Integrated circuit manufacture; Laser radiation effects; Optical scattering; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242894
