• DocumentCode
    2258503
  • Title

    The G4-FET: low voltage to high voltage operation and performance

  • Author

    Dufrene, B. ; Akarvardar, K. ; Cristoloveanu, S. ; Blalock, B. ; Fechne, P. ; Mojarrad, M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    We present the operational and performance of the 4-gate transistor (G4-FET) from the low voltage to the high voltage regime. Measured results show the complexity of threshold voltage, subthreshold swing, and breakdown voltage due to the multiple gate control utilized with the G4-FET. Devices fabricated in a 0.35 μm 3.3 V partially-depleted SOI process can achieve a breakdown voltage of 15 V, excellent subthreshold swing, and high mobility.
  • Keywords
    MOSFET; elemental semiconductors; semiconductor device breakdown; silicon-on-insulator; 0.35 micron; 15 V; 3.3 V; 4-gate transistor; G4-FET; SOI; Si-SiO2; breakdown voltage; subthreshold swing; threshold voltage; MOSFETs; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242895
  • Filename
    1242895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258503