DocumentCode :
2258514
Title :
Effective body contact in SOI devices by partial trench isolated body-tied (PTIBT) structure
Author :
Min, B.W. ; Mendicino, M.
Author_Institution :
CMOS Platform Dev., Motorola Inc., Austin, TX, USA
fYear :
2001
fDate :
2001
Firstpage :
469
Lastpage :
472
Abstract :
The floating body effect can be reduced by forcing a fixed potential to the SOI device body region using any of several body-tied structures but all generally suffer from adverse costs such as performance degradation and/or process complexity. In this work, we propose a novel body-tied structure, adding simple partial trench isolation, which effectively suppresses the floating body effects without performance degradation
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; integrated circuit design; isolation technology; silicon; silicon compounds; silicon-on-insulator; CMOS; PTIBT; PTIBT transistor; SOI devices; Si-SiO2; body-tied structures; effective body contact; fixed potential; floating body effect; floating body effects; partial trench isolated body-tied structure; partial trench isolation; performance degradation; CMOS process; CMOS technology; Capacitance; DNA; Degradation; Energy consumption; Etching; Isolation technology; Laboratories; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
Type :
conf
DOI :
10.1109/ISDRS.2001.984547
Filename :
984547
Link To Document :
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