Title :
A novel photodiode-type active pixel sensor utilizing DTMOS with reduced fixed-pattern-noise
Author :
Terauchi, Mamoru
Author_Institution :
Dept. of Comput. Eng., Hiroshima Univ., Japan
fDate :
29 Sept.-2 Oct. 2003
Abstract :
A novel active pixel sensor with reduced fixed-pattern-noise is proposed and its effectiveness is experimentally verified. Smaller characteristics fluctuation in threshold voltage and drain conductance of DTMOS than that of bulk counterpart considerably reduces fixed-pattern-noise of the proposed photodiode-type APS.
Keywords :
CMOS image sensors; CMOS integrated circuits; MOSFET; photodiodes; semiconductor device noise; drain conductance; dynamic threshold MOSFET; fixed-pattern-noise; novel photodiode-type active pixel sensor; threshold voltage; CMOS integrated circuits; MOSFETs; Photodiodes; Semiconductor device noise;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242896
