DocumentCode :
2258579
Title :
Silicon single crystal on quartz: fabrication and benefits
Author :
Brunier, Fransois ; Rayssac, O. ; Cayrefourcq, I. ; Oka, Hideaki ; Sato, Takashi ; Fournel, F. ; Lagahe, Chrystelle
Author_Institution :
Parc Technol. des Fontaines Bernin, SOITEC, Bernin, Japan
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
59
Lastpage :
60
Abstract :
In this paper, we present a process based on the well known Smart-Cut technology developed by SOITEC to build a hetero-substrate that benefits from the optical transparency of the substrate and the electrical properties of the active layer. This heterostructure consists in a thin monocrystalline Si layer transferred on a fused silica substrate and is usually called SOQ (Silicon on Quartz). Our SOQ wafer is compatible with high temperature processes and can find applications in various fields such as displays, imagers and RF devices.
Keywords :
chemical mechanical polishing; elemental semiconductors; ion implantation; quartz; semiconductor heterojunctions; semiconductor thin films; silicon; substrates; transparency; RF devices; Si-SiO2; Smart-Cut technology; active layer; electrical properties; fused silica substrate; hetero-substrate; optical transparency; silicon on quartz; silicon single crystal; thin monocrystalline Si layer; Ion implantation; Quartz; Semiconductor films; Semiconductor heterojunctions; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242897
Filename :
1242897
Link To Document :
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