Silicon single crystal on quartz: fabrication and benefits

Author

Brunier, Fransois ; Rayssac, O. ; Cayrefourcq, I. ; Oka, Hideaki ; Sato, Takashi ; Fournel, F. ; Lagahe, Chrystelle

Author_Institution

Parc Technol. des Fontaines Bernin, SOITEC, Bernin, Japan

fYear

2003

fDate

29 Sept.-2 Oct. 2003

Firstpage

59

Lastpage

60

Abstract

In this paper, we present a process based on the well known Smart-Cut technology developed by SOITEC to build a hetero-substrate that benefits from the optical transparency of the substrate and the electrical properties of the active layer. This heterostructure consists in a thin monocrystalline Si layer transferred on a fused silica substrate and is usually called SOQ (Silicon on Quartz). Our SOQ wafer is compatible with high temperature processes and can find applications in various fields such as displays, imagers and RF devices.

Keywords

chemical mechanical polishing; elemental semiconductors; ion implantation; quartz; semiconductor heterojunctions; semiconductor thin films; silicon; substrates; transparency; RF devices; Si-SiO₂; Smart-Cut technology; active layer; electrical properties; fused silica substrate; hetero-substrate; optical transparency; silicon on quartz; silicon single crystal; thin monocrystalline Si layer; Ion implantation; Quartz; Semiconductor films; Semiconductor heterojunctions; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2003. IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-7815-6

Type

conf

DOI

10.1109/SOI.2003.1242897

Filename

1242897