• DocumentCode
    2258594
  • Title

    Effect of nano-scale strained Si grown on SiGe-on-insulator on electron mobility

  • Author

    Park, J.G. ; Shim, T.H. ; Lee, T.H. ; Park, Y.K. ; Moon, H.K. ; Maeng, S.L. ; Cho, W.J. ; Yoo, S.D.

  • Author_Institution
    Nano-SOI Process Center, Hanyang Univ., Seoul, South Korea
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    In this paper, we studied experimentally as well as theoretically both effects of strained and nanoscale thickness of top silicon/SiGe-on-insulator on electron mobility.
  • Keywords
    Ge-Si alloys; electron mobility; elemental semiconductors; nanotechnology; semiconductor epitaxial layers; silicon; silicon-on-insulator; Si-SiGe; electron mobility; nanoscale strained Si effects; nanoscale thickness; top silicon/SiGe-on-insulator; Charge carrier mobility; Germanium alloys; Nanotechnology; Semiconductor epitaxial layers; Silicon; Silicon alloys; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242898
  • Filename
    1242898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258594