DocumentCode
2258648
Title
Design of DG-MOSFETs for high linearity performance
Author
Kaya, S. ; Ma, W. ; Asenov, A.
Author_Institution
SEECS, Ohio Univ., Athens, OH, USA
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
68
Lastpage
69
Abstract
In this paper, we carry out such a study for the first time and investigate the linearity of DG-MOSFETs using accurate 2-D device simulations. we also show that the DG-MOSFET linearity may be optimised by use of nonuniform doping techniques including low-high and delta doping profiles.
Keywords
MOSFET; doping profiles; semiconductor device models; semiconductor doping; semiconductor process modelling; 2D device simulation; delta doping profiles; dual gate MOSFET design; high linearity performance; nonuniform doping techniques; optimisation; MOSFETs; Semiconductor device doping; Semiconductor device modeling; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242901
Filename
1242901
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