DocumentCode :
2258674
Title :
NiSi MOCVD for fabricating FinFETs and UTB-SOI devices
Author :
Ogura, Atsushi ; Wakabayashi, Hitoshi ; Ishikawa, Masato ; Kada, Takeshi ; Machida, Hideaki ; Ohshita, Yoshio
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
70
Lastpage :
71
Abstract :
We investigated the use of NiSi MOCVD for fabricating FinFETs and UTB-SOI devices. MeCp2Ni was synthesized as a Ni precursor. The NiSi film deposited using MeCp2Ni and Si3H6 had a smooth interface with the Si substrate without Ni penetration. The step coverage of the deposited film on a patterned substrate was excellent.
Keywords :
MOCVD; MOSFET; elemental semiconductors; nickel compounds; semiconductor thin films; silicon-on-insulator; FET; MOCVD; Ni penetration; NiSi; NiSi MOCVD; NiSi film; SOI device; Si; Si substrate; film deposition; MOSFETs; Nickel compounds; Semiconductor films; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242902
Filename :
1242902
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2258674
بازگشت