• DocumentCode
    2258674
  • Title

    NiSi MOCVD for fabricating FinFETs and UTB-SOI devices

  • Author

    Ogura, Atsushi ; Wakabayashi, Hitoshi ; Ishikawa, Masato ; Kada, Takeshi ; Machida, Hideaki ; Ohshita, Yoshio

  • Author_Institution
    Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    70
  • Lastpage
    71
  • Abstract
    We investigated the use of NiSi MOCVD for fabricating FinFETs and UTB-SOI devices. MeCp2Ni was synthesized as a Ni precursor. The NiSi film deposited using MeCp2Ni and Si3H6 had a smooth interface with the Si substrate without Ni penetration. The step coverage of the deposited film on a patterned substrate was excellent.
  • Keywords
    MOCVD; MOSFET; elemental semiconductors; nickel compounds; semiconductor thin films; silicon-on-insulator; FET; MOCVD; Ni penetration; NiSi; NiSi MOCVD; NiSi film; SOI device; Si; Si substrate; film deposition; MOSFETs; Nickel compounds; Semiconductor films; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242902
  • Filename
    1242902
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258674