DocumentCode
2258684
Title
Proactive NBTI mitigation for busy functional units in out-of-order microprocessors
Author
Li, Lin ; Zhang, Youtao ; Yang, Jun ; Zhao, Jianhua
Author_Institution
Dept of ECE, Univ. of Pittsburgh, Pittsburgh, PA, USA
fYear
2010
fDate
8-12 March 2010
Firstpage
411
Lastpage
416
Abstract
Due to fast technology scaling, negative bias temperature instability (NBTI) has become a major reliability concern in designing modern integrated circuits. In this paper, we present a simple and proactive NBTI recovery scheme targeting at critical and busy functional units with storage cells in modern microprocessors. Existing schemes have limitations when recovering these functional units. By exploiting the idle time of busy functional units at per-buffer-entry level, our scheme achieves on average 5.57x MTTF (Mean Time To Failure) improvement at the cost of <1% IPC degradation and <1% area overhead.
Keywords
integrated circuit design; microprocessor chips; IPC degradation; MTTF; functional units; integrated circuit designing; mean time to failure; microprocessors; negative bias temperature instability; proactive NBTI mitigation; storage cells; Degradation; Integrated circuit reliability; MOSFETs; Microprocessors; Niobium compounds; Out of order; Stress; Threshold voltage; Timing; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
Conference_Location
Dresden
ISSN
1530-1591
Print_ISBN
978-1-4244-7054-9
Type
conf
DOI
10.1109/DATE.2010.5457170
Filename
5457170
Link To Document