• DocumentCode
    2258684
  • Title

    Proactive NBTI mitigation for busy functional units in out-of-order microprocessors

  • Author

    Li, Lin ; Zhang, Youtao ; Yang, Jun ; Zhao, Jianhua

  • Author_Institution
    Dept of ECE, Univ. of Pittsburgh, Pittsburgh, PA, USA
  • fYear
    2010
  • fDate
    8-12 March 2010
  • Firstpage
    411
  • Lastpage
    416
  • Abstract
    Due to fast technology scaling, negative bias temperature instability (NBTI) has become a major reliability concern in designing modern integrated circuits. In this paper, we present a simple and proactive NBTI recovery scheme targeting at critical and busy functional units with storage cells in modern microprocessors. Existing schemes have limitations when recovering these functional units. By exploiting the idle time of busy functional units at per-buffer-entry level, our scheme achieves on average 5.57x MTTF (Mean Time To Failure) improvement at the cost of <1% IPC degradation and <1% area overhead.
  • Keywords
    integrated circuit design; microprocessor chips; IPC degradation; MTTF; functional units; integrated circuit designing; mean time to failure; microprocessors; negative bias temperature instability; proactive NBTI mitigation; storage cells; Degradation; Integrated circuit reliability; MOSFETs; Microprocessors; Niobium compounds; Out of order; Stress; Threshold voltage; Timing; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
  • Conference_Location
    Dresden
  • ISSN
    1530-1591
  • Print_ISBN
    978-1-4244-7054-9
  • Type

    conf

  • DOI
    10.1109/DATE.2010.5457170
  • Filename
    5457170