Title :
Charge pumping effects in partially depleted SOI MOSFETs
Author :
Okhonin, S. ; Nagoga, M. ; Fazan, P.
Author_Institution :
STI, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper we describe the impact of the charge pumping effect on the on the partially depleted SOI MOSFET. We also compare the CP with other physical effects such as impact ionization and the valence band electron tunneling.
Keywords :
MOSFET; elemental semiconductors; impact ionisation; silicon-on-insulator; tunnelling; valence bands; Si; charge pumping effects; impact ionization; partially depleted SOI MOSFET; valence band electron tunneling; Impact ionization; MOSFETs; Silicon on insulator technology; Tunneling;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242904
