• DocumentCode
    2258771
  • Title

    Peculiarities of the temperature behavior of SOI MOSFETs in the deep submicron area

  • Author

    Vancaillie, L. ; Kilchytska, V. ; Delatte, P. ; Demeus, L. ; Matsuhashi, H. ; Ichikawa, F. ; Flandre, D.

  • Author_Institution
    Microelectron. Lab., Univ. Catholique de Louvain, Belgium
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    78
  • Lastpage
    79
  • Abstract
    In this paper, the temperature dependence of transistor fabricated in a thin film deep submicron SOI MOSFET fully depleted process, junction leakage current and transconductance were evaluated.
  • Keywords
    MOSFET; elemental semiconductors; leakage currents; silicon-on-insulator; thin films; Si; junction leakage current; thin film deep submicron SOI MOSFET; transconductance; Leakage currents; MOSFETs; Silicon on insulator technology; Thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242906
  • Filename
    1242906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258771