Title :
Recent advances and future trends of InAs/GaSb superlattice for very long wavelength infrared focal plane arrays (FPAs)
Author_Institution :
Dept. of Electron. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Abstract :
TypeII GaSb-InAs superlattices are an alternative to HgCdTe for the strategic windows of 3-5μm, 8-12 μm, as well as longer wavelengths. In this talk, I will present our recent results and future trends of the InAs-GaSb photodetector with a cut-off wavelength up to 26 μm
Keywords :
III-V semiconductors; focal planes; gallium compounds; indium compounds; infrared detectors; semiconductor superlattices; 26 micron; FPAs; InAs-GaSb; InAs-GaSb photodetector; InAs/GaSb superlattice; cut-off wavelength; very long wavelength infrared focal plane arrays; Composite materials; Effective mass; Electromagnetic wave absorption; Electrons; Gratings; III-V semiconductor materials; Mechanical factors; Photonic band gap; Superlattices; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984556
