DocumentCode :
2258795
Title :
Modeling isolation-induced mechanical stress effect on SOI MOS devices
Author :
Su, Ke-Wei ; Chen, Kuang-Hsin ; Chung, Tang-Xuan ; Chen, Hung-Wei ; Huang, Cheng-Chuan ; Chen, Hou-Yu ; Chang, Chang-Yun ; Lee, Di-Hong ; Wen, Cheng-Kuo ; Sheu, Yi-Ming ; Yang, Sheng-Jier ; Chiang, Chung-Shi ; Huang, Chien-Chao ; Yang, Fu-Liang ; Chia, Yu
Author_Institution :
TSMC, Hsinchu, Taiwan
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
80
Lastpage :
82
Abstract :
In this paper, the mechanical stress effect of SOI MOS devices was analysed. The width dependence of stress effect and drain current shift were evaluated.
Keywords :
MIS devices; MOSFET; elemental semiconductors; semiconductor device models; silicon-on-insulator; stress effects; SOI MOS devices; Si; drain current shift; modeling isolation-induced mechanical stress effect; MIS devices; MOSFETs; Semiconductor device modeling; Silicon on insulator technology; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242907
Filename :
1242907
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2258795
بازگشت