• DocumentCode
    2258852
  • Title

    Micropower, 0.35-μm partially depleted SOI CMOS preamplifiers having low white and flicker noise

  • Author

    Binkley, D.M. ; Ihme, D.H. ; Blalock, B.J. ; Mojarradi, M.M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., North Carolina Univ., Charlotte, NC, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    In this paper, analog circuit fabricated in SOI CMOS processes have the potential of maintaining required performance over the extreme temperature and radiation environment of deep space was studied. Low input referred white and flicker noise voltage was required to amplify signals.
  • Keywords
    CMOS analogue integrated circuits; elemental semiconductors; flicker noise; power amplifiers; preamplifiers; silicon-on-insulator; 0.35 micron; Si; flicker noise; partially depleted SOI CMOS preamplifiers; white noise; CMOS analog integrated circuits; Power amplifiers; Random noise; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242909
  • Filename
    1242909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258852