• DocumentCode
    2258910
  • Title

    Stand-by current in PD-SOI pseudo-nMOS circuits

  • Author

    Sivagnaname, Layakumaran ; Brown, Richard B.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    95
  • Lastpage
    96
  • Abstract
    In this paper, we compare the stand-by leakage power of controlled-load pseudo-nMOS circuits to that of conventional CMOS and MTCMOS in a 0.13μm dual VTpartially-depleted SOI tehnology.
  • Keywords
    MOS logic circuits; integrated circuit design; integrated circuit modelling; silicon-on-insulator; 0.13 micron; CMOS circuits; PD-SOI pseudo nMOS circuits; SOI technology; dual voltage; stand by leakage power; Integrated circuit design; Integrated circuit modeling; MOSFET logic devices; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242912
  • Filename
    1242912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2258910