Title :
Double gate MOSFET subthreshold logic for ultra-low power applications
Author :
Kim, JaeJoon ; Roy, Kaushik
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we show that double gate MOSFET is a promising device for subthreshold operations due to its (1) steep subthreshold slope (s) and (2) small gate capacitance in the subthreshold region. It is also shown that long channel DG MOSFET is better than short channel DG MOSFET for subthreshold operations in terms of performance and tolerance to process variation.
Keywords :
MOSFET; capacitance; double gate MOSFET subthreshold logic; gate capacitance; subthreshold operations; subthreshold slope; ultra low power applications; Capacitance; MOSFETs;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242913
