DocumentCode
2258941
Title
Analysis of the impact of gate-body signal phase on DTMOS inverters in 0.13 μm PD-SOI
Author
Drake, Alan J. ; Zamdmer, Noah ; Nowka, Kevin J. ; Brown, Richard B.
Author_Institution
Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
99
Lastpage
100
Abstract
In this paper, we analysis the impact of gate-body signal phase on DTMOS inverters in 0.13μm PD-SOI.
Keywords
MOSFET; integrated circuit modelling; invertors; logic gates; silicon-on-insulator; 0.13 micron; DTMOS inverters; PD-SOI; dynamic threshold transistors; gate body signal phase; Integrated circuit modeling; Inverters; MOSFETs; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242914
Filename
1242914
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