A study of metal-Ga ohmic metallizations to p-type 6H-SiC

Author

Kanyogoro, E.N. ; Liu, L. ; Iliadis, A.A. ; Jones, K.A. ; Wood, M.C. ; Derenge, M. ; Loughran, T.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA

fYear

2001

fDate

2001

Firstpage

527

Lastpage

528

Abstract

The development of high quality ohmic metallization on p-type SiC is of critical importance to the performance of high temperature/high power SiC devices. In this study the electrical properties of metal-Ga ohmic metallizations on p-type 6H-SiC are reported for Ga doses between 2×10¹⁵ and 2×10¹⁷ cm^-2 and as deposited and annealed Pt contacts. The direct-write Pt contacts were annealed at 1300 and 1500 °C in Ar atmosphere for 20 and 15 min respectively. The I-V characteristics of the contacts were obtained, and the contact resistance was measured using the TLM method. The contact resistance values were then plotted with the Ga dose

Keywords

contact resistance; high-temperature electronics; ohmic contacts; power semiconductor devices; semiconductor device metallisation; silicon compounds; transmission line matrix methods; wide band gap semiconductors; 1300 degC; 15 min; 1500 degC; 20 min; I-V characteristics; SiC; TLM method; contact resistance; direct-write Pt contacts; high power devices; high temperature devices; ohmic metallizations; Annealing; Atomic beams; Contact resistance; Ion beams; Laboratories; Metallization; Ohmic contacts; Silicon carbide; Surface resistance; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984564

Filename

984564