DocumentCode
2259076
Title
The pH response of a silicon-on-insulator MOSFET with an integrated nanofluidic cell
Author
Takulapalli, B.R. ; Thornton, Trevor J. ; Gust, D. ; Ashcroft, B. ; Lindsay, S.M. ; Zhang, H.Q. ; Tao, NJ
Author_Institution
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
114
Lastpage
116
Abstract
In this paper, we study the pH response of a buried channel SOI MOSFET integrated with a nanofluidic cell. The surface of the device is exposed to solutions of different pH to validate the sensitivity of the device to different chemical and biological environments.
Keywords
MOSFET; cells (electric); elemental semiconductors; microfluidics; nanotechnology; pH; sensitivity; silicon-on-insulator; surface treatment; SOI MOSFET; Si; biological environments; chemical environments; device surface; integrated nanofluidic cell; pH response; sensitivity; silicon-on-insulator MOSFET; Batteries; MOSFETs; Nanotechnology; Sensitivity; Silicon on insulator technology; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242920
Filename
1242920
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