Title :
Control of threshold voltage and short channel effects in ultra-thin strained-SOI CMOS
Author :
Numata, Toshinori ; Mizuno, Tomohisa ; Tezuka, Tsutomu ; Koga, Junji ; Takagi, Shin-ichi
Author_Institution :
MIRAI, Assoc. of Super-Adv. Electron. Technol., Kawasaki, Japan
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper threshold voltage, subthreshold slope and short channel effects, in strained-SOI n-MOSFET and p-MOSFET are examined quantitatively, with emphasis on the impact of band offset in Si/SiGe heterostructure, by two dimensional device simulation.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor device models; semiconductor thin films; silicon; silicon-on-insulator; Si-SiGe; Si/SiGe heterostructure; band offset; short channel effects; strained-SOI n-MOSFET; strained-SOI p-MOSFET; subthreshold slope; threshold voltage; two dimensional device simulation; ultrathin strained-SOI CMOS; CMOS integrated circuits; Germanium alloys; MOSFETs; Semiconductor device modeling; Semiconductor films; Silicon; Silicon alloys; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242922
