DocumentCode
2259177
Title
SOI wafer polishing with magnetorheological finishing (MRF)
Author
Tricard, Marc ; Dumas, Paul R. ; Golini, Don ; Mooney, James T.
Author_Institution
QED Technol., Rochester, NY, USA
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
127
Lastpage
129
Abstract
In this paper, SOI wafer polishing with magnetorheological finishing (MRF) process were discussed. A precision polishing method called magnetorheological finishing used to improve nominal thickness and associated thickness uniformity of the silicon layer.
Keywords
electrolytic polishing; elemental semiconductors; magnetorheology; silicon-on-insulator; SOI wafer polishing; Si-SiO2; magnetorheological finishing; precision polishing; silicon layer; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242924
Filename
1242924
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