Title :
Q-parasitics and their influence to the behaviour of nanoscaled CMOS circuits
Author :
Felgenhauer, F. ; Begoin, M. ; Mathis, W.
Author_Institution :
Inst. of Electromagn. Theor. & Microwave Technique, Hannover Univ., Germany
fDate :
28 Aug.-2 Sept. 2005
Abstract :
In the mesoscopic regime, the MOS device performance is affected by gate-induced quantization effects leading to a loss of transconductance and threshold voltage shift and gate leakage tunneling currents degrading the overall device performance. We discuss the expected impact of quantum effects in highly down scaled CMOS circuits. Based on 1D numerical simulations for transport in mesoscopic systems, we set up SPICE circuit models. The SPICE models rebuild the influence of quantum effects; and the functionality of classical circuit concepts can be ´tested´ in their robustness against these effects. A few circuit examples will be given.
Keywords :
CMOS integrated circuits; SPICE; leakage currents; nanoelectronics; quantum interference devices; 1D numerical simulations; MOS device performance; Q-parasitics; SPICE circuit model; gate leakage tunneling current; gate-induced quantization effects; mesoscopic charge transport; nanoscaled CMOS circuit; threshold voltage shift; transconductance losses; Circuit testing; Gate leakage; Leakage current; MOS devices; Performance loss; Quantization; SPICE; Semiconductor device modeling; Threshold voltage; Transconductance;
Conference_Titel :
Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference on
Print_ISBN :
0-7803-9066-0
DOI :
10.1109/ECCTD.2005.1523035
