Title :
Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction (NBD)
Author :
Usuda, Koji ; Numata, T. ; Tezuka, T. ; Sugiyama, N. ; Moriyama, Y. ; Nakaharai, S. ; Takagi, S.
Author_Institution :
MIRAI Project, ASET, Kawasaki, Japan
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, a strain evaluation method with high spatial resolution using the nanobeam electron diffraction method for the SGOI and SSON structures.
Keywords :
Ge-Si alloys; electron diffraction; elemental semiconductors; semiconductor epitaxial layers; silicon; silicon-on-insulator; stress relaxation; Si-SiGe; nanobeam electron diffraction; strain evaluation; strained-Si-on-SiGe-on-insulator; Germanium alloys; Semiconductor epitaxial layers; Silicon; Silicon alloys; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242928
