DocumentCode :
2259305
Title :
A detailed analysis of SOI MOSFETs for SOC design
Author :
Suryagandh, Sushant S. ; Garg, Mayank ; Woo, Jason C S
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
147
Lastpage :
148
Abstract :
In this paper, we present a physics based Rout model for the bulk and SOI MOSFETs operating at high frequencies, where the AC kink effect is supressed. The model is verified with Silvaco 2-D simulator. Analog performance in terms of intrinsic gain and ft of the bulk and SOI MOSFETs is compared using these models.
Keywords :
MOSFET; integrated circuit design; semiconductor device models; silicon-on-insulator; system-on-chip; Rout model; SOC design; SOI MOSFET; Silvaco 2-D simulator; ac kink effect; analog performance; Integrated circuit design; MOSFETs; Semiconductor device modeling; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242931
Filename :
1242931
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2259305
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