Title :
Mobility enhancement via volume inversion in double-gate MOSFETs
Author :
Ge, Lixin ; Fossum, Jerry G. ; Gamiz, Francisco
Author_Institution :
Digital DNA Labs., Motorola Inc., Austin, TX, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we describe the mobility enhancement via moderate as well as strong volume inversion, in asymmetrical DG (ADG) as well as SDG MOSFETs.
Keywords :
MOSFET; Monte Carlo methods; electron mobility; elemental semiconductors; semiconductor device models; semiconductor thin films; silicon; Si; asymmetrical double gate MOSFET; electron mobility; volume inversion; Charge carrier mobility; MOSFETs; Monte Carlo methods; Semiconductor device modeling; Semiconductor films; Silicon;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242934
