DocumentCode :
2259381
Title :
Non-classical CMOS device design
Author :
Trivedi, V.P. ; Fossum, J.G. ; Vandooren, A.
Author_Institution :
Florida Univ., Gainesville, FL, USA
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
155
Lastpage :
157
Abstract :
In this paper, we describe the designing process of nonclassical FD/SOI and SDG CMOS devices and to allow high-performance (HP) and low-power (LP) CMOS to be integrated on the same chip.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; integrated circuit design; silicon; silicon-on-insulator; fully depleted SOI CMOS device; symmetrical double gate CMOS device; CMOS integrated circuits; Integrated circuit design; MOSFETs; Silicon; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242935
Filename :
1242935
Link To Document :
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