4H- and 6H-SiC vertical static induction transistor with p-n junction as a gate

Silicon carbide has attracted considerable interest as a material for high power, high frequency devices. The unique properties such as high thermal conductivity, anomaly large breakdown fields and others provide the potential for development of effective devices particularly in the microwave region. The development of a microwave SiC power transistor with vertical design is of great interest. Such a transistor has been formed with Schottky gate contact. We use a p-n junction instead of the Schottky gate contact and present its I-V characteristics