• DocumentCode
    2259570
  • Title

    A new dynamic beta-ratio circuit technique for strained-Si technology

  • Author

    Joshi, Rajiv V. ; Kim, Keunwoo ; Chuang, Ching-Te

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    179
  • Lastpage
    180
  • Abstract
    In this paper, a new dynamic β-ratio technique for strained Si technology where the strength of the pFET is enhanced during active operation. The viability and benefit of the technique are discussed and compared with alternative techniques.
  • Keywords
    elemental semiconductors; field effect transistor circuits; field effect transistors; semiconductor device models; silicon; silicon-on-insulator; Si; dynamic beta-ratio circuit; pFET; strained-Si technology; FET circuits; FETs; Semiconductor device modeling; Silicon; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242943
  • Filename
    1242943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2259570