Title :
Complete RF characterisation of CMOS power transistors for low noise and high power front end amplifier design
Author :
Walthes, W. ; Pascht, A. ; Berroth, M.
Abstract :
The advances in CMOS process technology enables the design of analog high frequency circuits for mobile communication products. Low noise amplifiers as well as power amplifiers are required in the RF front end. This work presents a complete and consistent characterisation procedure for power transistors of a standard 0.35 μm CMOS technology. With the developed tools for small signal, large signal and noise modelling a full characterisation of the transistor is achieved
Keywords :
power MOSFET; power amplifiers; radiofrequency amplifiers; semiconductor device models; semiconductor device noise; 0.35 micron; CMOS power transistor; RF front-end; large-signal model; low noise amplifier; noise model; power amplifier; small-signal model; CMOS technology; Circuit noise; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Low-noise amplifiers; MOSFET circuits; Power transistors; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984592
