Broaden buried oxide layer of SOI structure in SIMOX using water plasma

Author

Chen, Jing ; Dong, Yemin ; Wang, Xiang ; Yi, Wanbing ; Wang, Xi

Author_Institution

Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China

fYear

2003

fDate

29 Sept.-2 Oct. 2003

Firstpage

181

Lastpage

182

Abstract

In this paper, the BOX layer in SOI materials fabricated by the water ion implantation approach is broaden more than 50% over that made by the conventional low-dose SIMOX process. SIMS results revealed that there are two hydrogen enrichment peaks around the damaged regions induced by oxygen ion irradiation in the as-implanted samples, and the two peaks correspond to the two interfaces of the BOX in the annealed samples. The heavily damaged region with hydrogen induced defects appear to be the adsorption center for the outside oxygen to diffuse into silicon and then broaden the BOX layer during the high-temperature annealing process.

Keywords

SIMOX; annealing; diffusion; doping profiles; hydrogen; ion beam effects; plasma immersion ion implantation; secondary ion mass spectra; silicon; H₂; SIMOX; SIMS; SOI structure; Si; Si-SiO₂; adsorption center; broaden buried oxide layer; damaged regions; diffusion; heavily damaged region; high-temperature annealing; hydrogen enrichment peaks; hydrogen induced defects; oxygen ion irradiation; water ion implantation; water plasma; Annealing; Diffusion processes; Hydrogen; Ion radiation effects; Mass spectroscopy; SIMOX; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2003. IEEE International

ISSN

1078-621X

Print_ISBN

0-7803-7815-6

Type

conf

DOI

10.1109/SOI.2003.1242944

Filename

1242944