Title :
High performance SOI DTMOS using a retrograde base with a low impurity surface channel
Author :
Yu, Feixia ; Cheng, Ming-C ; Xu, Jun
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
Abstract :
This paper presents a simulation-based investigation on 0.13 μm SOI dynamic threshold MOS (DTMOS) structures with uniform and retrograde base profiles. The base of the retrograde SOI DTMOS is split into a low impurity surface channel and a heavily doped body. The low impurity channel is able to provide high channel mobility, and the heavily doped body enhances the body bias effect to take full advantage of the DTMOS function. In addition, the heavily doped body is responsible for lowering body and off currents, and can also effectively suppress short-channel effects
Keywords :
MIS devices; carrier mobility; silicon-on-insulator; 0.13 micron; SOI DTMOS device; body bias effect; body current; channel mobility; heavily doped body; low impurity surface channel; off current; retrograde base; short channel effect; Doping profiles; Dynamic voltage scaling; Energy consumption; Impurities; Low voltage; MOS devices; Microelectronics; Silicon; Temperature; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984594
