Title :
Geometrical analysis of two-transistor circuits with more than three operating points
Author_Institution :
Dept. of Electr. Eng. & Inf. Technol., Dresden Univ. of Technol., Germany
fDate :
28 Aug.-2 Sept. 2005
Abstract :
This paper presents a new geometrical motivated approach to analyse resistive networks decomposable into two 3-pole subnetworks. Especially, networks composed of two MOSTs or BJTs that can have more than three operating points are analysed with this method. All results are verified additionally with a homotopy method realisable with standard circuit simulators.
Keywords :
MOSFET; bipolar transistors; network analysis; poles and zeros; 3-pole subnetworks; MOST; bipolar junction transistor; homotopy method; operating points; resistive networks; two-transistor circuits; Circuit analysis; Circuit simulation; Electronic mail; Equations; History; Integrated circuit interconnections; Resistors; Solid modeling; Voltage;
Conference_Titel :
Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference on
Print_ISBN :
0-7803-9066-0
DOI :
10.1109/ECCTD.2005.1523057
