Investigation of on-state breakdown in InAlAs/InGaAs HEMTs

Author

Isler, Mark ; Schünemann, Klaus

Author_Institution

Arbeitsbereich Hochfrequenztech., Technische Univ. Hamburg-Harburg, Germany

fYear

2001

fDate

2001

Firstpage

630

Lastpage

633

Abstract

By performing Monte Carlo simulations of submicron InAlAs/InGaAs HEMTs on InP, we have calculated consistently the DC, RF, and on-state breakdown characteristics, which are in close agreement with measured data. Our calculations reveal for open-channel conditions the occurrence of impact ionization not only in the channel but also in the cap layer of our device due to a short gate-drain recess length. Furthermore, the breakdown dynamics has been studied by performing calculations of the y-parameters for operating the HEMT under high ionization conditions. Our results describe a significant frequency dependence of the small-signal elements in the conventional equivalent circuit model of the FET

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device breakdown; semiconductor device models; DC breakdown; InAlAs-InGaAs; InP substrate; Monte Carlo simulation; RF breakdown; equivalent circuit model; impact ionization; on-state breakdown; submicron InAlAs/InGaAs HEMT; y-parameters; Electric breakdown; Frequency dependence; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Performance evaluation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984599

Filename

984599