Power module with new features for SiC devices

Author

Iizuka, Yuki ; Nashida, Norihiro ; Horio, Masafumi ; Nakamura, Yoshihiko ; Ikeda, Yasuhiro

Author_Institution

Fuji Electr. Co., Ltd., Fuji, Japan

fYear

2011

fDate

6-10 Sept. 2011

Firstpage

529

Lastpage

529

Abstract

A newly developed structure package has been investigated. It has new features, multi-pin attached interconnections and epoxy encapsulation. The pin interconnection provide large current capability for the power module. Due to the epoxy encapsulation, FEA and power-cycling test proved their superior characteristics of reliability. It has a both features for high-density packaging and high reliability, to realize large current capabilities and high temperature operation, as one of the potential candidates to next generation power module with SiC devices.

Keywords

encapsulation; power semiconductor devices; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; epoxy encapsulation; high density packaging; multipin attached interconnections; next generation power module; pin interconnection; Copper; Encapsulation; Integrated circuit interconnections; Multichip modules; Reliability; Silicon carbide; Encapsulation; Packaging; Power Module; Reliability; Wire-bond-less;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulating Materials (ISEIM), Proceedings of 2011 International Conference on

Conference_Location

Kyoto

Print_ISBN

978-4-88686-074-3

Type

conf

DOI

10.1109/ISEIM.2011.6826395

Filename

6826395