• DocumentCode
    2259895
  • Title

    Energy- and endurance-aware design of phase change memory caches

  • Author

    Joo, Yongsoo ; Niu, Dimin ; Dong, Xiangyu ; Sun, Guangyu ; Chang, Naehyuck ; Xie, Yuan

  • Author_Institution
    Dept. of Comput. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2010
  • fDate
    8-12 March 2010
  • Firstpage
    136
  • Lastpage
    141
  • Abstract
    Phase change memory (PCM) is one of the most promising technology among emerging non-volatile random access memory technologies. Implementing a cache memory using PCM provides many benefits such as high density, non-volatility, low leakage power, and high immunity to soft error. However, its disadvantages such as high write latency, high write energy, and limited write endurance prevent it from being used as a drop-in replacement of an SRAM cache. In this paper, we study a set of techniques to design an energy- and endurance-aware PCM cache. We also modeled the timing, energy, endurance, and area of PCM caches and integrated them into a PCM cache simulator to evaluate the techniques. Experiments show that our PCM cache design can achieve 8% of energy saving and 3.8 years of lifetime compared with a baseline PCM cache having less than a hour of lifetime.
  • Keywords
    SRAM chips; cache storage; phase change memories; SRAM cache; endurance-aware design; energy-aware design; nonvolatile random access memory technologies; phase change memory caches; Cache memory; Crystallization; Delay; Energy consumption; Germanium alloys; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
  • Conference_Location
    Dresden
  • ISSN
    1530-1591
  • Print_ISBN
    978-1-4244-7054-9
  • Type

    conf

  • DOI
    10.1109/DATE.2010.5457221
  • Filename
    5457221