Title :
Reliability of polynomial IDS-VGS-VDS model fitted using harmonic-balance simulation
Author :
Aikio, Janne P. ; Rahkonen, Timo
Author_Institution :
Dept. of Electr. & Inf. Eng., Oulu Univ., Finland
fDate :
28 Aug.-2 Sept. 2005
Abstract :
A distortion tear-down analysis technique based on harmonic-balance (HB) simulation and polynomial model fitting has been presented recently. However, the fitting of IDS-VGS-VDS current source of LDMOS RF power transistor amplifier suffers from high correlation between controlling voltages VGS and VDS. In this paper, the accuracy of the analysis results is discussed, and techniques to improve the reliability of the fitting are presented.
Keywords :
harmonic analysis; polynomials; reliability; semiconductor device models; LDMOS RF power transistor amplifier; current source; distortion tear-down analysis technique; harmonic-balance simulation; polynomial model fitting; Analytical models; Circuit simulation; Circuit testing; Equations; Frequency; Intrusion detection; MATLAB; Mathematical model; Polynomials; Voltage control;
Conference_Titel :
Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference on
Print_ISBN :
0-7803-9066-0
DOI :
10.1109/ECCTD.2005.1523067
