Title :
A drift free nernstian iridium oxide pH sensor
Author :
Hendrikse, J. ; Olthuis, W. ; Bergveld, P.
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Abstract :
A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurements
Keywords :
chemical sensors; electrochemical electrodes; ion sensitive field effect transistors; iridium compounds; pH measurement; FET-structure; IrO2; MOSFET; almost ideal nernstian response; drift free nernstian iridium oxide pH sensor; drift problems; electrode; gate contact; metal oxide pH sensors; Actuators; Amperometric sensors; Capacitance; Capacitive sensors; Electrodes; Protons; Solid state circuits; Testing; Threshold voltage; Transducers;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.635491
