DocumentCode :
2260209
Title :
Temperature Dependence of Sensitivity of Avalanche Photodiode Based Optical Receiver
Author :
Prokes, Ales
Author_Institution :
Inst. of Radio Electron., Brno Univ. of Technol., Brno
fYear :
2006
fDate :
27-30 Nov. 2006
Firstpage :
1
Lastpage :
4
Abstract :
In the paper, the temperature dependence of the sensitivity of an avalanche-photodiode-based receiver applied in the free space optical communication link is discussed. Communication systems of this type are exposed to a wide range of operating temperatures, which markedly affect many photodiode and preamplifier parameters. The paper describes receiver sensitivity calculation, taking into consideration the temperature dependence of avalanche photodiode gain, excess noise factor, dark current and thermal noise of preamplifier resistances. Presented calculation is demonstrated on the connection of a small-area silicon APD operating in the wavelength range from 820 to 1150 nm with a transimpedance preamplifier using a bipolar junction transistor.
Keywords :
avalanche photodiodes; bipolar transistors; dark conductivity; elemental semiconductors; optical links; optical losses; optical receivers; preamplifiers; silicon; thermal noise; Si; avalanche photodiode sensitivity; bipolar junction transistor; dark current; free space optical communication link; optical receiver; small-area silicon APD; thermal noise; transimpedance preamplifier; wavelength 820 nm to 1150 nm; Avalanche photodiodes; Dark current; Optical fiber communication; Optical noise; Optical receivers; Preamplifiers; Temperature dependence; Temperature distribution; Temperature sensors; Thermal factors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communication Technology, 2006. ICCT '06. International Conference on
Conference_Location :
Guilin
Print_ISBN :
1-4244-0800-8
Electronic_ISBN :
1-4244-0801-6
Type :
conf
DOI :
10.1109/ICCT.2006.341725
Filename :
4146289
Link To Document :
بازگشت