DocumentCode
2260209
Title
Temperature Dependence of Sensitivity of Avalanche Photodiode Based Optical Receiver
Author
Prokes, Ales
Author_Institution
Inst. of Radio Electron., Brno Univ. of Technol., Brno
fYear
2006
fDate
27-30 Nov. 2006
Firstpage
1
Lastpage
4
Abstract
In the paper, the temperature dependence of the sensitivity of an avalanche-photodiode-based receiver applied in the free space optical communication link is discussed. Communication systems of this type are exposed to a wide range of operating temperatures, which markedly affect many photodiode and preamplifier parameters. The paper describes receiver sensitivity calculation, taking into consideration the temperature dependence of avalanche photodiode gain, excess noise factor, dark current and thermal noise of preamplifier resistances. Presented calculation is demonstrated on the connection of a small-area silicon APD operating in the wavelength range from 820 to 1150 nm with a transimpedance preamplifier using a bipolar junction transistor.
Keywords
avalanche photodiodes; bipolar transistors; dark conductivity; elemental semiconductors; optical links; optical losses; optical receivers; preamplifiers; silicon; thermal noise; Si; avalanche photodiode sensitivity; bipolar junction transistor; dark current; free space optical communication link; optical receiver; small-area silicon APD; thermal noise; transimpedance preamplifier; wavelength 820 nm to 1150 nm; Avalanche photodiodes; Dark current; Optical fiber communication; Optical noise; Optical receivers; Preamplifiers; Temperature dependence; Temperature distribution; Temperature sensors; Thermal factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Technology, 2006. ICCT '06. International Conference on
Conference_Location
Guilin
Print_ISBN
1-4244-0800-8
Electronic_ISBN
1-4244-0801-6
Type
conf
DOI
10.1109/ICCT.2006.341725
Filename
4146289
Link To Document