A low power Transimpedance Amplifier using inductive feedback approach in 90nm CMOS

An inductive feedback approach for BW extension of transimpedance amplifiers has been proposed. The effect of parasitic capacitances of the MOS transistor has been reduced using this approach. The process of zero-pole cancellation to extend the BW of the amplifier has been explained. To demonstrate the feasibility of the technique a new transimpedance amplifier has been simulated in a well-known CMOS technology (i.e. 90 nm STMicroelectronics). It achieves a 3-dB bandwidth of more than 16GHz in the presence of a 150fF photodiode capacitance and 5fF loading capacitance while only dissipating 2.2 mW. Despite this low power dissipation, the amplifier shows superior noise performance.