DocumentCode :
2260337
Title :
Scale-dependent optical near-fields in InAs quantum dots and their application to non-pixelated memory architecture
Author :
Naruse, Makoto ; Nishibayashi, Kazuhiro ; Kawazoe, Tadashi ; Akahane, Kouichi ; Yamamoto, Naokatsu ; Ohtsu, Motoichi
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Tokyo
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate scale-dependent near-field photoluminescence of InAs quantum dots. Our analysis, based on eigen-decomposition, leads to a novel non-pixelated memory architecture thanks to spectral diversity obtained at an optimal scale of optical near-fields.
Keywords :
III-V semiconductors; eigenvalues and eigenfunctions; indium compounds; memory architecture; photoluminescence; semiconductor quantum dots; InAs; InAs quantum dots; eigen-decomposition; near-field photoluminescence; non-pixelated memory architecture; scale-dependent optical near-fields; spectral diversity; Gallium arsenide; Memory architecture; Nanophotonics; Optical buffering; Optical devices; Optical microscopy; Optical sensors; Photoluminescence; Probes; Quantum dots; (180.4243) Near-field microscopy; (200.3050) Information processing; (210.4680) Optical memories; (250.5590) Quantum-well, -wire and -dot devices; (999.9999) Nanophotonics;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4572512
Link To Document :
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