DocumentCode
2260601
Title
The effect of DIBL on the performance of InP MESFETs using two-dimensional analytical model
Author
Badr, Khamis H.
Author_Institution
Air Defence Coll., Alexandria, Egypt
fYear
1993
fDate
16-18 Aug 1993
Firstpage
729
Abstract
A two-dimensional analytic model is developed to study drain induced barrier lowering (DIBL) on the performance of indium phosphite (InP) MESFETs operating in or near subthreshold regime. This model discusses the electrical limitations for VLSI applications and the physical effects associating the short-channel MESFET operations. The obtained results are compared to those published for GaAs MESFETs. Discussions and comments are also provided
Keywords
III-V semiconductors; Schottky gate field effect transistors; VLSI; indium compounds; semiconductor device models; 2D model; InP; MESFETs; VLSI applications; drain induced barrier lowering; physical effects; short-channel MESFET operations; subthreshold regime; two-dimensional analytical model; Analytical models; Educational institutions; Electrostatics; FETs; Gallium arsenide; Indium phosphide; Laplace equations; MESFETs; Poisson equations; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1993., Proceedings of the 36th Midwest Symposium on
Conference_Location
Detroit, MI
Print_ISBN
0-7803-1760-2
Type
conf
DOI
10.1109/MWSCAS.1993.342944
Filename
342944
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