Title :
The effect of DIBL on the performance of InP MESFETs using two-dimensional analytical model
Author_Institution :
Air Defence Coll., Alexandria, Egypt
Abstract :
A two-dimensional analytic model is developed to study drain induced barrier lowering (DIBL) on the performance of indium phosphite (InP) MESFETs operating in or near subthreshold regime. This model discusses the electrical limitations for VLSI applications and the physical effects associating the short-channel MESFET operations. The obtained results are compared to those published for GaAs MESFETs. Discussions and comments are also provided
Keywords :
III-V semiconductors; Schottky gate field effect transistors; VLSI; indium compounds; semiconductor device models; 2D model; InP; MESFETs; VLSI applications; drain induced barrier lowering; physical effects; short-channel MESFET operations; subthreshold regime; two-dimensional analytical model; Analytical models; Educational institutions; Electrostatics; FETs; Gallium arsenide; Indium phosphide; Laplace equations; MESFETs; Poisson equations; Substrates;
Conference_Titel :
Circuits and Systems, 1993., Proceedings of the 36th Midwest Symposium on
Conference_Location :
Detroit, MI
Print_ISBN :
0-7803-1760-2
DOI :
10.1109/MWSCAS.1993.342944
