Title :
Effect of mobile ionic-charge on CMOS based ion-sensitive field-effect transistors (ISFETs)
Author :
Prodromakis, T. ; Georgiou, P. ; Michelakis, K. ; Toumazou, C.
Author_Institution :
Inst. of Biomed. Eng., Imperial Coll. London, London, UK
Abstract :
This work is an investigation on the large threshold voltage variation exhibited in CMOS based ISFETs. This irregularity is thoroughly examined and is identified to be caused by mobile ionic charge that is induced in the sensing membrane when the membrane is in contact with the ionic-solution. This auxiliary charge increments the effective capacitance of the sensing membrane, causing irregular shifts in the characteristics of the devices. Several methods for overcoming this issue are addressed.
Keywords :
CMOS integrated circuits; ion sensitive field effect transistors; CMOS; ISFET; ion sensitive field-effect transistor; mobile ionic-charge; threshold voltage variation; Biomedical engineering; Biomembranes; CMOS technology; Chemical sensors; Chemical technology; Educational institutions; FETs; Insulation; Protons; Threshold voltage; CMOS; ISFET; chemical sensor; drift; mobile ionic charge; threshold variation; trapped charge;
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
DOI :
10.1109/ISCAS.2009.5118225
