Title :
Comparison of acceleration models for THB induced degradation
Author :
Marchut, Leslie ; Whitman, Charles S.
Author_Institution :
RFMD, Greensboro, NC, USA
Abstract :
Three different mathematical formulations for acceleration factors of failure rate as a function of relative humidity are investigated using numerical simulations. The three models are also applied to a set of failure data collected previously for GaAs PHEMT devices.
Keywords :
III-V semiconductors; acceleration; gallium compounds; high electron mobility transistors; humidity; semiconductor device models; GaAs; GaAs PHEMT device; THB induced degradation; acceleration model; failure rate; relative humidity; temperature-humidity-bias; Acceleration; Degradation; Equations; Gallium arsenide; Humidity; Mathematical model; Numerical simulation; PHEMTs; Semiconductor device reliability; Temperature;
Conference_Titel :
Reliability of Compound Semiconductors Digest (ROCS), 2009
Conference_Location :
Greensboro, NC
Print_ISBN :
978-0-7908-0124-7
