DocumentCode :
2261772
Title :
Fast high fidelity hole spin initialization in a single InGaAs quantum dot
Author :
Godden, T.M. ; Boyle, S.J. ; Ramsay, A.J. ; Fox, A.M. ; Skolnick, M.S.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield, UK
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
A hole spin trapped in a quantum dot is a potential qubit. We demonstrate near unit fidelity initialization of a single hole spin in a InGaAs/GaAs Quantum dot.
Keywords :
III-V semiconductors; gallium arsenide; hole traps; indium compounds; semiconductor quantum dots; InGaAs-GaAs; fast high fidelity hole spin initialization; qubit; single hole spin; single quantum dot; Excitons; Indium gallium arsenide; Magnetic fields; Optical pulses; Quantum dot lasers; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5951532
Link To Document :
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