Silicon constituent in modern digital fotoapparatus

Usual circuit of forming the image of object is based on transformation of radiation with various intensity into the electrical signal with the aid of matrix photodetector devices (MPD) which can be formed on the devices with charge connection (DCC) or devices with charge injection (DCI). However, since 90th years of last century an energical attempt to use the structures built with the aid of CMOS technology have been made for creation the matrix image sensors. During last some years of recent century these quickly developing photo sensitive structures was named in the scientific literature as CMOS sensors. CMOS technology consists in forming the n-channel and p-channel transistors in the single substrate. Forming the n-channel transistor in the n-substrate is earring out in acceptor-doped field of the surface. The features of this technology allow increasing the density of elements on the crystal and to decrease the space of non-transparent metal interconnects. All these features allow forming more pixels on the unit of surface in comparison with DCC technology but allow saving the parameters of DCC sensors. It should be added that the CMOS technology allows forming the invertors and memory cell and, hence, forms the basis for computers. An important application of CMOS matrixes is fotoapparats and television. It´s obviously that the CMOS matrixes are applied for computers, video-, photo- and television cameras, mobile phones, games and security systems.