Title :
The physical simulation of electrostatic microsystems with finite element method
Author :
Kolchuzhin, Vladimir A.
Author_Institution :
Chemnitz Univ. of Technol., Germany
Abstract :
The physical level simulation of complex MEMS devices can be obtained by solving partial differential equations describing 3D coupled physical fields. This paper has described the methods to analyze electrostatic microsystems within FEM. Finally, a chronological description of FEM is presented in the context of integrating new computational technology into an existing program.
Keywords :
electrostatic devices; finite element analysis; micromechanical devices; 3D coupled physical fields; MEMS devices; electrostatic microsystems; finite element method; partial differential equations; physical simulation; Actuators; Computational modeling; Electrostatics; Finite element methods; Microelectromechanical devices; Micromechanical devices; Microstructure; Microswitches; Partial differential equations; Thermal stresses;
Conference_Titel :
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
Print_ISBN :
5-7782-0491-4
DOI :
10.1109/SIBEDM.2005.195569
