Reconstruction phase transition α(2×4) <-> β(2×4) on [001] GaAs surface

Author

Dmitriev, Dmitriy V. ; Galitsyn, Yuriy G. ; Mansurov, Vladimir G. ; Toropov, Alexander I.

Author_Institution

Inst. of Semicond. Phys. SB RAS, Novosibirsk State Tech. Univ., Russia

fYear

2005

fDate

1-5 July 2005

Firstpage

32

Lastpage

33

Abstract

One of the basic and studied problems in molecular beam epitaxy is the question about the nucleation and subsequent lateral growth of initial nucleus on the surface. In this study MBE equipment was used with solid state sources of materials. The RHEED system was applied to get the diffraction patterns on reflection. The changing RHEED patterns determine the surface reconstruction and tracks the reconstructional transition. The [001] GaAs substrates with dimensions 3 × 3 mm ² were studied.

Keywords

III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; nucleation; phase transformations; reflection high energy electron diffraction; diffraction patterns; molecular beam epitaxy; nucleation; phase transition reconstruction; reflection high energy electron diffraction; semiconductor surface; Gallium arsenide; Geometry; Molecular beam epitaxial growth; Nominations and elections; Optical reflection; Physics; Solid state circuits; Substrates; Surface reconstruction; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on

ISSN

1815-3712

Print_ISBN

5-7782-0491-4

Type

conf

DOI

10.1109/SIBEDM.2005.195573

Filename

1523178