DocumentCode
2262754
Title
Influence of traps on magnetophotoconductivity in p-HgCdTe
Author
Protasov, Dmitry D. ; Kostuchenko, Vladimir Ya ; Ovsyuk, Victor V.
Author_Institution
Inst. of Semicond. Phys. SB RAS, Novosibirsk State Tech. Univ., Russia
fYear
2005
fDate
1-5 July 2005
Firstpage
47
Lastpage
48
Abstract
The photoconductivity in magnetic field (magnetophotoconductivity) in p-HgCdTe was studied. Magnetic field and light were perpendicular to samples surface. The authors have found that the magnetophotoconductivity at temperature range 77-125 K has a small constant component independent of magnetic field. The origin of this phenomenon may be explained by influence of traps on magnetophotoconductivity.
Keywords
II-VI semiconductors; cadmium compounds; carrier lifetime; infrared detectors; magnetic fields; magnetic traps; mercury compounds; photoelectromagnetic effects; 77 to 125 K; HgCdTe; cadmium-mercury telluride; carrier lifetime; magnetic field; magnetophotoconductivity; Charge carrier processes; Electron mobility; Electron traps; Magnetic fields; Magnetic materials; Magnetic semiconductors; Magnetosphere; Photoconductivity; Photonic crystals; Saturation magnetization;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
ISSN
1815-3712
Print_ISBN
5-7782-0491-4
Type
conf
DOI
10.1109/SIBEDM.2005.195580
Filename
1523185
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