Critical density effects in sub-picosecond laser-ablation of silicon by plasma-absorption ion-energy spectroscopy

Author

Zhang, Zhenhao ; VanRompay, P.A. ; Yalisove, S.M. ; Mourou, G.A. ; Pronko, P.P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

134

Abstract

Summary from only given. It is shown in this work that the critical density condition of a plasma initially formed by a single pulse can be subsequently modified by the pumping action of a secondary time-delayed pulse. We show the results of measuring total ion yield and average energy in a pre-formed ablation plume generated by a 120 femtosecond (780 nm) laser pulse followed by an identical time delayed pulse.

Keywords

Rutherford backscattering; high-speed optical techniques; ion-surface impact; laser ablation; optical pumping; plasma density; plasma diagnostics; silicon; 120 fs; 780 nm; Si; average energy; critical density; fs laser pulse plasma generation; incoming laser pulse; plasma formation; plasma-absorption ion-energy spectroscopy; pre-formed ablation plume; pumping action; secondary time-delayed pulse; single pulse; total ion yield; Energy measurement; Laser ablation; Optical pulse generation; Plasma density; Plasma measurements; Pulse measurements; Pump lasers; Silicon; Spectroscopy; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1033527

Filename

1033527